Title :
Equivalent circuit model of a Ge/Si avalanche photodiode
Author :
Dai, Daoxin ; Chen, Hui-Wen ; Bowers, John E. ; Kang, Yimin ; Morse, Mike ; Paniccia, Mario J.
Author_Institution :
ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
An equivalent circuit model for a separate-absorption-charge-multiplication Ge/Si avalanche photodiode is presented. The current dependence of the resonance frequency scales with square root of current, as expected.
Keywords :
avalanche photodiodes; elemental semiconductors; equivalent circuits; germanium; silicon; Ge-Si; avalanche photodiode; equivalent circuit model; genetic algorithm; resonance frequency; separate absorption charge multiplication; Avalanche photodiodes; Equivalent circuits;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338304
