• DocumentCode
    2471751
  • Title

    Equivalent circuit model of a Ge/Si avalanche photodiode

  • Author

    Dai, Daoxin ; Chen, Hui-Wen ; Bowers, John E. ; Kang, Yimin ; Morse, Mike ; Paniccia, Mario J.

  • Author_Institution
    ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    13
  • Lastpage
    15
  • Abstract
    An equivalent circuit model for a separate-absorption-charge-multiplication Ge/Si avalanche photodiode is presented. The current dependence of the resonance frequency scales with square root of current, as expected.
  • Keywords
    avalanche photodiodes; elemental semiconductors; equivalent circuits; germanium; silicon; Ge-Si; avalanche photodiode; equivalent circuit model; genetic algorithm; resonance frequency; separate absorption charge multiplication; Avalanche photodiodes; Equivalent circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
  • Conference_Location
    San Francisco, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-4402-1
  • Electronic_ISBN
    1949-2081
  • Type

    conf

  • DOI
    10.1109/GROUP4.2009.5338304
  • Filename
    5338304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2471751