• DocumentCode
    2471850
  • Title

    6E-1 A Small-Sized SAW Duplexer on a SiO2/IDT/LiNbO3 Structure for Wideband CDMA Application

  • Author

    Nakamura, H. ; Nakanishi, H. ; Tsurunari, T. ; Matsunami, K. ; Iwasaki, Y.

  • Author_Institution
    Panasonic Electron. Devices Co., Ltd., Osaka
  • fYear
    2007
  • fDate
    28-31 Oct. 2007
  • Firstpage
    488
  • Lastpage
    491
  • Abstract
    A small-sized SAW duplexer for Wideband CDMA (W-CDMA) application at 2 GHz band has been developed. The W-CDMA application has a wide duplex gap between transmitting (Tx) band and receiving (Rx) band. To realize a small-sized SAW duplexer, a substrate with high electromechanical coupling coefficient (K2) and small temperature coefficient of frequency (TCF) is needed. Our W-CDMA SAW duplexer was fabricated on a SiO2/IDT/5degYX-LiNbO3 structure. Using this structure, an appropriate high K2 and small TCF could be achieved, but the spurious caused by Rayleigh-mode would occur. This spurious appears at lower side than the resonance frequency of SAW resonator, and degrades performances of the duplexer. We have successfully developed the technique to suppress the spurious by controlling a shape of SiO2 film on IDT electrodes. And, the spurious dependences of IDT designs, pitch and metallization ratio, were cleared. The spurious suppression technique has been applied to the W- CDMA SAW duplexer. The duplexer has excellent performance of low insertion loss, high attenuation and small TCF. The Tx and Rx insertion loss are 1.2 dB and 1.9 dB, respectively. The size of the duplexer could be miniaturized to 2.5times2.0 mm2. Additionally, the duplexer has sufficient power durability by using the multi-layer electrodes of AlMgCu/Ti. These techniques could be applied to the other wide-band SAW applications for realizing good performances.
  • Keywords
    code division multiple access; interdigital transducers; lithium compounds; multiplexing equipment; piezoelectricity; silicon compounds; surface acoustic wave resonators; IDT designs; IDT electrodes; LiNbO3; SAW resonator; SiO2; electromechanical coupling coefficient; insertion loss; metallization ratio; multilayer electrodes; pitch; power durability; small-sized SAW duplexer; spurious suppression technique; surface acoustic wave devices; temperature coefficient of frequency; wideband CDMA application; Electrodes; Frequency; Insertion loss; Multiaccess communication; Resonance; Shape control; Substrates; Surface acoustic waves; Temperature; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2007. IEEE
  • Conference_Location
    New York, NY
  • ISSN
    1051-0117
  • Print_ISBN
    978-1-4244-1384-3
  • Electronic_ISBN
    1051-0117
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2007.131
  • Filename
    4409704