Title :
A monolithic integration of Ge photodiodes with Si variable optical attenuators
Author :
Park, Sungbong ; Tsuchizawa, Tai ; Watanabe, Toshifumi ; Shinojima, Hiroyuki ; Nishi, Hidetaka ; Yamada, Koji ; Ishikawa, Yasuhiko ; Wada, Kazumi ; Itabashi, Seiichi
Author_Institution :
NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
Abstract :
Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. These Ge photodiodes have potential for monolithic integration with other Si photonic components.
Keywords :
dark conductivity; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical attenuators; p-i-n photodiodes; silicon; Ge p-i-n photodiodes; Ge-Si; current 60 nA; dark current; germanium photodiodes; monolithic integration; photodiode responsivity; silicon photonic components; silicon variable optical attenuators; Dark current; Monolithic integrated circuits; Optical attenuators; Optical buffering; Optical fibers; Optical microscopy; Optical waveguides; Photodiodes; Scanning electron microscopy; Slabs;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338310
