A monolithic integration of Ge photodiodes with Si variable optical attenuators

Author

Park, Sungbong ; Tsuchizawa, Tai ; Watanabe, Toshifumi ; Shinojima, Hiroyuki ; Nishi, Hidetaka ; Yamada, Koji ; Ishikawa, Yasuhiko ; Wada, Kazumi ; Itabashi, Seiichi

Author_Institution

NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

4

Lastpage

6

Abstract

Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. These Ge photodiodes have potential for monolithic integration with other Si photonic components.

Keywords

dark conductivity; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical attenuators; p-i-n photodiodes; silicon; Ge p-i-n photodiodes; Ge-Si; current 60 nA; dark current; germanium photodiodes; monolithic integration; photodiode responsivity; silicon photonic components; silicon variable optical attenuators; Dark current; Monolithic integrated circuits; Optical attenuators; Optical buffering; Optical fibers; Optical microscopy; Optical waveguides; Photodiodes; Scanning electron microscopy; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Conference_Location

San Francisco, CA

ISSN

1949-2081

Print_ISBN

978-1-4244-4402-1

Electronic_ISBN

1949-2081

Type

conf

DOI

10.1109/GROUP4.2009.5338310

Filename

5338310