Low-threshold, efficient vertical cavity lasers with tapered apertures

Author

Hegblom, Eric R. ; Margalit, Near M. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

177

Abstract

Summary form only given. We report on the improved performance of InGaAs MQW vertical cavity (VCSEL) lasers with tapered oxide apertures positioned 50nm from the quantum wells. A vertical cavity laser with 2 μm opening has a threshold of 145 μA and an external differential efficiency of 55%. The good slope efficiency combined with low-threshold is made possible by reduced current spreading and low optical scattering losses

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 145 muA; 2 mum; 55 percent; InGaAs; InGaAs MQW VCSEL lasers; external differential efficiency; good slope efficiency; low optical scattering losses; low-threshold; low-threshold efficient vertical cavity lasers; reduced current spreading; tapered apertures; tapered oxide apertures; vertical cavity laser; Apertures; Dielectric losses; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Power generation; Quantum well lasers; Semiconductor device reliability; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739519

Filename

739519