Title :
Low-threshold, efficient vertical cavity lasers with tapered apertures
Author :
Hegblom, Eric R. ; Margalit, Near M. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. We report on the improved performance of InGaAs MQW vertical cavity (VCSEL) lasers with tapered oxide apertures positioned 50nm from the quantum wells. A vertical cavity laser with 2 μm opening has a threshold of 145 μA and an external differential efficiency of 55%. The good slope efficiency combined with low-threshold is made possible by reduced current spreading and low optical scattering losses
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 145 muA; 2 mum; 55 percent; InGaAs; InGaAs MQW VCSEL lasers; external differential efficiency; good slope efficiency; low optical scattering losses; low-threshold; low-threshold efficient vertical cavity lasers; reduced current spreading; tapered apertures; tapered oxide apertures; vertical cavity laser; Apertures; Dielectric losses; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Power generation; Quantum well lasers; Semiconductor device reliability; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739519
