• DocumentCode
    2471948
  • Title

    High performance AlAs native oxide-confined GaInP/AlGaInP 635 nm laser diode

  • Author

    Kim, Hak-Hwan ; Oh, Dong-Ch´eol ; Hwang, Sun-Lyeong ; Bae, Yu-Dong ; Sung, Kang-Hyun ; Jung, Jong-Je

  • Volume
    2
  • fYear
    1998
  • fDate
    3-4 Dec 1998
  • Firstpage
    181
  • Abstract
    Highly efficient GaInP-AlGaInP red laser diodes have been widely used in applications. In this experiment, we carried out wet-oxidation of AlAs which was selectively re-grown on ridge sides with SiO2 masked top
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; oxidation; semiconductor lasers; AlAs; GaInP-AlGaInP; GaInP-AlGaInP red laser diodes; SiO2; SiO2 masked top; high performance AlAs native oxide-confined GaInP-AlGaInP 635 nm laser diode; ridge sides; selectively re-grown; wet-oxidation; Chemical lasers; Diode lasers; Laser modes; Optical refraction; Optical variables control; Optical waveguides; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4947-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1998.739521
  • Filename
    739521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2471948