• DocumentCode
    2472031
  • Title

    ArF lithography for the 130 and 100 nm technology nodes

  • Author

    Ronse, K.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2000
  • fDate
    11-13 July 2000
  • Firstpage
    6
  • Lastpage
    7
  • Abstract
    The status of 193 nm lithography for the 130 and 100 nm nodes is outlined. For the first node, the experimental results are compared to 248 nm. Data are shown illustrating the performance of 193 nm lithography for the 100 nm technology node and predictions of further required improvements are made.
  • Keywords
    photolithography; 100 nm technology node; 130 nm technology node; 193 nm; ArF lithography; resists; Adhesives; Dry etching; Economic forecasting; Focusing; Lenses; Lithography; Production systems; Research and development; Resists; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2000 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-004-6
  • Type

    conf

  • DOI
    10.1109/IMNC.2000.872597
  • Filename
    872597
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2472031