DocumentCode :
2472044
Title :
Highly accurate and precise measurement technique for effective exposure dose
Author :
Izuha, K. ; Fujisawa, T. ; Asano, M. ; Inoue, S.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
8
Lastpage :
9
Abstract :
The recent advantage of a measurement technique for effective exposure dose (EED), which is performed by monitoring the residual thickness of the photoresist, has enabled us to elucidate errors consuming the dose margins. The EED describes total thickness variation caused by non-uniformity of illumination, post exposure baking, and non-uniformity of development, and so on. In this paper, the principles for EED measurement are discussed. The accuracy and precision of this technique is shown. Furthermore, the dynamic range of this technology is considered.
Keywords :
ULSI; dosimetry; integrated circuit measurement; measurement errors; photoresists; accuracy; dynamic range; effective exposure dose; errors; highly accurate measurement technique; illumination; nonuniformity; photoresist; post exposure baking; precise measurement technique; residual thickness; total thickness variation; Fluctuations; Image converters; Image segmentation; Laboratories; Measurement techniques; Microelectronics; Resists; Testing; Thickness measurement; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872598
Filename :
872598
Link To Document :
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