AlSi/sub x/O/sub y/ as a high transmittance embedded material for AttPSM and the correlation between the chemical compositions and optical properties of AlSi/sub x/O/sub y/ in 193 nm lithography

Author

Cheng-Ming Lin

Author_Institution

Inst. of Appl. Chem., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2000

fDate

11-13 July 2000

Firstpage

12

Lastpage

13

Abstract

Summary form only given. This paper reports the utilization of AlSi/sub x/O/sub y/ as a new high transmittance embedded material for AttPSM at 193 nm. AlSi/sub x/O/sub y/ thin films were formed by plasma sputtering of Al (140-170 W) and Si (50-70 W) under Ar and oxygen. Its refractive index n, extinction coefficient k, reflectance RX and transmittance TX at 193 nm could be manipulated and kept in the useful range for the high transmittance AttPSM.

Keywords

aluminium compounds; light transmission; phase shifting masks; reflectivity; refractive index; sputtered coatings; stoichiometry; ultraviolet lithography; 140 to 170 W; 193 nm; 50 to 70 W; AlSi/sub x/O/sub y/; AlSiO; AttPSM; chemical composition; extinction coefficient; high transmittance AttPSM; high transmittance embedded material; lithography; optical properties; plasma sputtering; reflectance; refractive index; transmittance; Etching; Focusing; Oxygen; Refractive index; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872600

Filename

872600