Title :
AlSi/sub x/O/sub y/ as a high transmittance embedded material for AttPSM and the correlation between the chemical compositions and optical properties of AlSi/sub x/O/sub y/ in 193 nm lithography
Author_Institution :
Inst. of Appl. Chem., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Summary form only given. This paper reports the utilization of AlSi/sub x/O/sub y/ as a new high transmittance embedded material for AttPSM at 193 nm. AlSi/sub x/O/sub y/ thin films were formed by plasma sputtering of Al (140-170 W) and Si (50-70 W) under Ar and oxygen. Its refractive index n, extinction coefficient k, reflectance RX and transmittance TX at 193 nm could be manipulated and kept in the useful range for the high transmittance AttPSM.
Keywords :
aluminium compounds; light transmission; phase shifting masks; reflectivity; refractive index; sputtered coatings; stoichiometry; ultraviolet lithography; 140 to 170 W; 193 nm; 50 to 70 W; AlSi/sub x/O/sub y/; AlSiO; AttPSM; chemical composition; extinction coefficient; high transmittance AttPSM; high transmittance embedded material; lithography; optical properties; plasma sputtering; reflectance; refractive index; transmittance; Etching; Focusing; Oxygen; Refractive index; Resists;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872600
