Title :
Structural and light-emission properties of bulk Germanium islands grown on Silicon using Molecular Beam Epitaxy
Author :
Nataraj, L. ; Sustersic, N. ; Coppinger, M. ; Gerlein, F. ; Kolodzey, J. ; Cloutier, S.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Abstract :
We report on the optoelectronic properties of bulk Germanium islands formed on Silicon by Molecular Beam Epitaxy. More specifically, we will discuss the role of strains and doping in favoring efficient light-emission at telecommunication wavelengths.
Keywords :
band structure; elemental semiconductors; germanium; island structure; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; Ge:B; Ge:P; MBE; Si; band structure; band-to-band recombination; bulk germanium islands; dome islands; doping; light emission; molecular beam epitaxy; nonradiative recombination; optoelectronic properties; photoluminescence; structural properties; superdome islands; telecommunication wavelengths; CMOS technology; Capacitive sensors; Doping; Germanium alloys; Germanium silicon alloys; Microelectronics; Molecular beam epitaxial growth; Radiative recombination; Silicon germanium; Spectroscopy;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338321
