Approach to modify crystalline structures of Er2SiO5 by pulsed laser deposition

Er₂SiO₅ crystal shows strong and sharp Er-related PL emissions at room temperature. It is expected as a basic material of waveguide amplifiers in silicon photonics. Recently we have proposed Er₂SiO₅ crystal preparation by Pulsed Laser Deposition (PLD) method for device applications. In this paper we introduce PLD approach to modify crystalline structures of Er₂SiO₅ crystal and the related materials. Here we focus on formation of Er₂SiO₅/Si stacked structure toward light emitting devices (LEDs) and formation of Er_xY_2-xSiO₅ systems to reduce upconversion effectively.