• DocumentCode
    2472163
  • Title

    Photo-response of Si-rich oxynitride film

  • Author

    Yuan, Zhizhong ; Anopchenko, A. ; Prezioso, S. ; Hossain, S.M. ; Wang, M. ; Pucker, G. ; Bellutti, P. ; Pavesi, L.

  • Author_Institution
    Dipt. di Fis., Univ. di Trento, Povo, Italy
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    172
  • Lastpage
    174
  • Abstract
    Negative photo-conductivity, super linear variation of short circuit current with incident light power, and IR absorption have been observed in Si-rich oxynitride film containing silicon nanocrystals and the mechanism was discussed.
  • Keywords
    elemental semiconductors; nanostructured materials; photoconductivity; semiconductor thin films; silicon; IR absorption; Si; Si-rich oxynitride film; incident light power; negative photo-conductivity; photo-response; short circuit current; silicon nanocrystals; Electromagnetic wave absorption; Nanocrystals; Semiconductor films; Short circuit currents; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
  • Conference_Location
    San Francisco, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-4402-1
  • Electronic_ISBN
    1949-2081
  • Type

    conf

  • DOI
    10.1109/GROUP4.2009.5338327
  • Filename
    5338327