DocumentCode
2472163
Title
Photo-response of Si-rich oxynitride film
Author
Yuan, Zhizhong ; Anopchenko, A. ; Prezioso, S. ; Hossain, S.M. ; Wang, M. ; Pucker, G. ; Bellutti, P. ; Pavesi, L.
Author_Institution
Dipt. di Fis., Univ. di Trento, Povo, Italy
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
172
Lastpage
174
Abstract
Negative photo-conductivity, super linear variation of short circuit current with incident light power, and IR absorption have been observed in Si-rich oxynitride film containing silicon nanocrystals and the mechanism was discussed.
Keywords
elemental semiconductors; nanostructured materials; photoconductivity; semiconductor thin films; silicon; IR absorption; Si; Si-rich oxynitride film; incident light power; negative photo-conductivity; photo-response; short circuit current; silicon nanocrystals; Electromagnetic wave absorption; Nanocrystals; Semiconductor films; Short circuit currents; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location
San Francisco, CA
ISSN
1949-2081
Print_ISBN
978-1-4244-4402-1
Electronic_ISBN
1949-2081
Type
conf
DOI
10.1109/GROUP4.2009.5338327
Filename
5338327
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