• DocumentCode
    2472314
  • Title

    Electrical characteristics of proton bombarded GaAs vertical-cavity-surface-emitting lasers

  • Author

    Van Der Ziel, Jan P. ; Ramaswamy, Ananth

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    2
  • fYear
    1998
  • fDate
    3-4 Dec 1998
  • Firstpage
    217
  • Abstract
    Analysis of data from VCSELs with different d2 proton implant diameters indicate the presence of both dominant surface recombination occurring at the intersection of the deep proton implant and the active layer, and smaller bulk recombination occurring in the active layer under the laser aperture
  • Keywords
    gallium arsenide; ion implantation; ion recombination; proton effects; semiconductor lasers; surface emitting lasers; GaAs; active layer; bulk recombination; deep proton implant; dominant surface recombination; electrical characteristics; laser aperture; proton bombarded GaAs vertical-cavity-surface-emitting lasers; proton implant diameters; Apertures; Electric variables; Gallium arsenide; Implants; Laser modes; Protons; Solid modeling; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4947-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1998.739538
  • Filename
    739538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2472314