Title :
Carrier thermalization in Ge quantum wells
Author :
Lange, C. ; Köster, N.S. ; Sigg, H. ; Chrastina, D. ; Isella, G. ; von Kanel, H. ; Chatterjee, S.
Author_Institution :
Mater. Sci. Center, Philipps-Univ., Marburg, Germany
Abstract :
Ultrafast carrier relaxation of Ge/SiGe quantum wells grown on a Si substrate are investigated using pump-probe spectroscopy. A nonthermal carrier distribution is observed. The corresponding inter- and intra-valley scattering times are deduced.
Keywords :
carrier relaxation time; elemental semiconductors; germanium; infrared spectra; semiconductor quantum wells; time resolved spectra; Ge; Si; Si substrate; carrier thermalization; germanium quantum wells; intervalley scattering time; intravalley scattering time; linear absorption spectrum; nonthermal carrier distribution; pump-probe spectroscopy; ultrafast carrier relaxation; Absorption; Bleaching; Electrons; Germanium silicon alloys; Lattices; Particle scattering; Phonons; Plasma temperature; Polarization; Silicon germanium;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338335
