DocumentCode
2472330
Title
Carrier thermalization in Ge quantum wells
Author
Lange, C. ; Köster, N.S. ; Sigg, H. ; Chrastina, D. ; Isella, G. ; von Kanel, H. ; Chatterjee, S.
Author_Institution
Mater. Sci. Center, Philipps-Univ., Marburg, Germany
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
151
Lastpage
153
Abstract
Ultrafast carrier relaxation of Ge/SiGe quantum wells grown on a Si substrate are investigated using pump-probe spectroscopy. A nonthermal carrier distribution is observed. The corresponding inter- and intra-valley scattering times are deduced.
Keywords
carrier relaxation time; elemental semiconductors; germanium; infrared spectra; semiconductor quantum wells; time resolved spectra; Ge; Si; Si substrate; carrier thermalization; germanium quantum wells; intervalley scattering time; intravalley scattering time; linear absorption spectrum; nonthermal carrier distribution; pump-probe spectroscopy; ultrafast carrier relaxation; Absorption; Bleaching; Electrons; Germanium silicon alloys; Lattices; Particle scattering; Phonons; Plasma temperature; Polarization; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location
San Francisco, CA
ISSN
1949-2081
Print_ISBN
978-1-4244-4402-1
Electronic_ISBN
1949-2081
Type
conf
DOI
10.1109/GROUP4.2009.5338335
Filename
5338335
Link To Document