Characterization of Phase-Change Material Using Verilog-A and its Validation as a Memory Element

This paper presents SPICE modeling of Phase-change Random Access Memory (PCRAM). Different models of PCRAM have been already proposed but those models still lack capability to exactly model the behavior of PCRAM. In this paper we have introduced various physical parameters in the programming, to accurately model PCRAM behavior. The modeling of PCRAM cell has been done in Verilog-A and simulation results have been extensively verified using SPICE. Further, we have integrated the proposed model with the modified CNFET based read-write circuit. This paper emerges with the successful modeling of R-I characteristics of PCRAM. Read and write operations with proper programming pulses have also been demonstrated in this paper.