Titanium oxide vertical resistive random-access memory device

Pt/TiO₂/Pt vertical resistive random-access memory switching devices were fabricated in a vertical three-dimensional structure by combining conventional photolithography, electron-beam evaporation for electrodes and atomic layer deposition for dielectric layers. The active switching cross-sectional area was ~0.02 μm², which is comparable to nanosized devices that require more elaborative fabrication processes. Structural integrity and electrical characteristics of the vertical memory device were analysed by cross-sectional scanning, transmission electron microscopy and current-voltage characteristics.