DocumentCode :
2472436
Title :
Sub-50-nm patterning in EUV lithography
Author :
Oizumi, H. ; Nishiyama, I. ; Yamanashi, H. ; Ei Yano ; Okazaki, S.
Author_Institution :
EUV Lithography Lab., Assoc. of Super-Adv. Electron. Technol., Atsugi, Japan
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
48
Lastpage :
49
Abstract :
In this work, we have introduced and investigated a micro-field exposure system for EUV lithography (EUVL) at an exposure wavelength of 13.5 nm using 20:1 Schwarzschild optics. The resolution limit of this exposure system was evaluated by experimental pattern replications.
Keywords :
ultraviolet lithography; 13.5 nm; 50 nm; EUV lithography; Schwarzschild optics; micro-field exposure system; pattern replication; resolution limit; Acceleration; Laboratories; Lighting; Lithography; Mirrors; Nonhomogeneous media; Optical films; Optical filters; Resists; Ultraviolet sources;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872616
Filename :
872616
Link To Document :
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