Title :
ECR etching of /spl alpha/-Ta for x-ray mask absorber using chlorine and fluoride gas mixture
Author :
Tsuchizawa, T. ; Iriguchi, H. ; Takahashi, C. ; Shimada, M. ; Uchiyama, S. ; Oda, M.
Author_Institution :
NTT Telecommun. Energy Labs., Kanagawa, Japan
Abstract :
We investigated the effect of using fluoride gas in ECR etching of /spl alpha/-Ta and confirmed that the addition of CF4 to Cl2 reduces the pattern roughness and can fabricate x-ray masks with pattern sizes of less than 100 nm. The results of CD uniformity will also be reported.
Keywords :
X-ray masks; sputter etching; tantalum; /spl alpha/-Ta; CD uniformity; ECR etching; Ta; X-ray mask absorber; chlorine/fluoride gas mixture; pattern roughness; Biomembranes; Etching;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872617
