Crystalline silicon nanomembrane stacking for large-area flexible photodetectors

Author

Yang, Weiquan ; Yang, Hongjun ; Qin, Guoxuan ; Pang, Huiqing ; Berggren, Jesper ; Hammar, Mattias ; Soref, Richard ; Ma, Zhenqiang ; Zhou, Weidong

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

110

Lastpage

112

Abstract

Flexible photodetectors were demonstrated experimentally on large-area crystalline silicon nanomembranes (3 mm times 3 mm), based on wet transfer and metal-frame supported transfer processes. Very low dark current (a few nA) and linear photoresponses were demonstrated for both Si MSM and InP PIN photodiodes on flexible PET substrates.

Keywords

dark conductivity; elemental semiconductors; membranes; metal-semiconductor-metal structures; nanostructured materials; p-i-n photodiodes; photodetectors; silicon; InP; InP PIN photodiodes; Si; crystalline silicon nanomembrane stacking; flexible PET substrates; large-area crystalline silicon nanomembranes; large-area flexible photodetectors; linear photoresponses; metal-frame supported transfer process; metal-insulator-metal photodetector; size 3 mm; very low dark current; wet transfer process; Crystalline materials; Crystallization; Indium phosphide; Nanobioscience; Photodetectors; Photonic crystals; Positron emission tomography; Silicon; Stacking; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Conference_Location

San Francisco, CA

ISSN

1949-2081

Print_ISBN

978-1-4244-4402-1

Electronic_ISBN

1949-2081

Type

conf

DOI

10.1109/GROUP4.2009.5338343

Filename

5338343