DocumentCode :
2472448
Title :
Crystalline silicon nanomembrane stacking for large-area flexible photodetectors
Author :
Yang, Weiquan ; Yang, Hongjun ; Qin, Guoxuan ; Pang, Huiqing ; Berggren, Jesper ; Hammar, Mattias ; Soref, Richard ; Ma, Zhenqiang ; Zhou, Weidong
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA
fYear :
2009
fDate :
9-11 Sept. 2009
Firstpage :
110
Lastpage :
112
Abstract :
Flexible photodetectors were demonstrated experimentally on large-area crystalline silicon nanomembranes (3 mm times 3 mm), based on wet transfer and metal-frame supported transfer processes. Very low dark current (a few nA) and linear photoresponses were demonstrated for both Si MSM and InP PIN photodiodes on flexible PET substrates.
Keywords :
dark conductivity; elemental semiconductors; membranes; metal-semiconductor-metal structures; nanostructured materials; p-i-n photodiodes; photodetectors; silicon; InP; InP PIN photodiodes; Si; crystalline silicon nanomembrane stacking; flexible PET substrates; large-area crystalline silicon nanomembranes; large-area flexible photodetectors; linear photoresponses; metal-frame supported transfer process; metal-insulator-metal photodetector; size 3 mm; very low dark current; wet transfer process; Crystalline materials; Crystallization; Indium phosphide; Nanobioscience; Photodetectors; Photonic crystals; Positron emission tomography; Silicon; Stacking; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
ISSN :
1949-2081
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
Type :
conf
DOI :
10.1109/GROUP4.2009.5338343
Filename :
5338343
Link To Document :
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