Stress measurements in oxidized GaAs-AlAs structures by micro-Raman spectroscopy

Author

Pan, Z. ; Zhang, Y. ; Du, Y. ; Han, H.X. ; Wu, R.H.

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

242

Abstract

We investigated the stress distribution induced in a GaAs layer by the lateral oxidation of an underlying AlAs layer with micro-Raman spectroscopy. Combining with the measurement of micro-photoluminescence (PL), we found smaller strain, better homogeneity and lower density of the nonradiative recombination center for oxidized GaAs-AlAs heterostructures containing a thin AlGaAs middle layer compared to that without the AlGaAs layer

Keywords

III-V semiconductors; Raman spectra; aluminium compounds; gallium arsenide; oxidation; photoluminescence; semiconductor superlattices; stress measurement; AlGaAs layer; GaAs-AlAs; homogeneity; lateral oxidation; lower density; micro-Raman spectroscopy; micro-photoluminescence; nonradiative recombination center; oxidized GaAs-AlAs heterostructures; oxidized GaAs/AlAs structures; stress distribution; stress measurements; thin AlGaAs middle layer; underlying AlAs layer; Capacitive sensors; Gallium arsenide; Optical buffering; Oxidation; Phonons; Spectroscopy; Strain measurement; Stress measurement; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739549

Filename

739549