Title :
Photoluminescence of dry-oxidized Er3+-doped Alx Ga1-xAs
Author :
Kou, L. ; Hall, D.C. ; Muth, J.F. ; Zhang, T. ; Kolbas, R.M.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Abstract :
We present experimental results on dry oxides of AlGaAs semiconductor which provide further evidence that OH-groups, unavoidably present in wet thermally oxidized AlGaAs films, act as luminescence-quenching nonradiative decay centers. Further process optimization to produce OH-free films without crystal dissociation is required
Keywords :
III-V semiconductors; aluminium compounds; erbium; gallium arsenide; optical films; photoluminescence; radiation quenching; AlGaAs semiconductor; AlGaAs:Er; Er3+-doped AlxGa1-xAs; OH; OH-free films; OH-groups; crystal dissociation; dry-oxidized; luminescence-quenching nonradiative decay centers; photoluminescence; process optimization; wet thermally oxidized AlGaAs films; Argon; Detectors; Electron tubes; Erbium; Fluorescence; Laser excitation; Optical microscopy; Oxidation; Photoluminescence; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739550
