A 1-8 GHz MMIC down-conversion mixer with input/output active baluns using SiGe HBT process

Author

Lee, Sang-Heung ; Lee, Ja-Yol ; Lee, Seung-Yun ; Park, Chan Woo ; Kang, Jin-Yeong

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2004

fDate

19-22 Sept. 2004

Firstpage

63

Lastpage

66

Abstract

A 1-8 GHz MMIC down-conversion mixer for RF receiver is designed and fabricated using 0.8 μm SiGe HBT process technology. This mixer is implemented on chip using RF/LO wideband matching circuits, RF/LO input balun circuits, and IF output balun circuit. The measured results of the fabricated mixer show positive power conversion gain from 1 GHz to 8 GHz, bandwidth of 4.5 GHz, LO isolation (LO to RF isolation and LO to IF isolation) between -40 dB and -60 dB, IIP3 between 0 dBm and -4 dBm, current consumption of 21 mA for 3.0 V supply voltage. The chip size of the fabricated mixer is 1.9 mm × 1.3 mm.

Keywords

Ge-Si alloys; MMIC frequency convertors; MMIC mixers; UHF frequency convertors; UHF mixers; baluns; bipolar MMIC; integrated circuit design; 0.8 micron; 1 to 8 GHz; 1.3 mm; 1.9 mm; 21 mA; 3.0 V; 4.5 GHz; HBT process; IF output balun circuit; MMIC; MMIC down-conversion mixer; RF receiver; RF/LO input balun circuits; RF/LO wideband matching circuits; SiGe; current consumption; input/output active baluns; power conversion gain; supply voltage; Circuits; Current measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Isolation technology; MMICs; Radio frequency; Silicon germanium; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2004 IEEE

Print_ISBN

0-7803-8451-2

Type

conf

DOI

10.1109/RAWCON.2004.1389072

Filename

1389072