DocumentCode
2472590
Title
Evaluation of the effective image blurring factors in the synchrotron proximity X-ray lithography simulation
Author
Yongduck Seo ; Ohyun Kim
Author_Institution
Adv. Lithography Center, Postech, Kyungbuk, South Korea
fYear
2000
fDate
11-13 July 2000
Firstpage
64
Lastpage
65
Abstract
An evaluation of the effective image blurring factors in the horizontal and vertical directions for the synchrotron proximity X-ray lithography simulation was studied, compared with the experimental data for various conditions of the gap between the mask and the wafer.
Keywords
X-ray lithography; proximity effect (lithography); semiconductor process modelling; effective image blurring factor; synchrotron proximity X-ray lithography simulation; Biomembranes; Convolution; Electrons; Gaussian distribution; Light scattering; Light sources; Resists; Synchrotrons; X-ray lithography; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872624
Filename
872624
Link To Document