Abstract :
The following topics are dealt with: power electronics; advanced high-voltage switches; wideband devices; GaN devices; electronics packaging; low voltage devices; MOSFET; CMOS integrated circuit; semiconductor device reliability; advanced high-voltage diodes; integrated power technology; and SiC devices.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; electronics packaging; gallium compounds; power electronics; semiconductor device reliability; semiconductor diodes; silicon compounds; switches; wide band gap semiconductors; CMOS integrated circuit; GaN; MOSFET; SiC; advanced high-voltage diodes; advanced high-voltage switches; electronics packaging; gallium nitride devices; integrated power technology; low voltage devices; power electronics; semiconductor device reliability; silicon carbide devices; wideband devices;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229001
