A true enhancement mode single supply power HFET for portable applications

Author

Glass, E. ; Huang, J.-H. ; Abrokwah, J. ; Bernhardt, B. ; Majerus, M. ; Spears, E. ; Droopad, R. ; Ooms, B.

Author_Institution

Motorola Inc., Tempe, AZ, USA

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1399

Abstract

A true enhancement mode heterojunction FET has been developed for low voltage, high efficiency power amplifier applications. A 12 mm wide/spl times/1.0 /spl mu/m gate length device-with no additional circuitry-and only a single voltage supply of 3.5 V exhibited a power output of +31.5 dBm with 75% power-added efficiency at a power gain of 11.6 dB at 850 MHz.

Keywords

MMIC power amplifiers; UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; field effect MMIC; integrated circuit measurement; junction gate field effect transistors; power field effect transistors; 1 mum; 11.6 dB; 3.5 V; 75 percent; 850 MHz; GaAs; MMIC single supply power amplifier; Motorola complementary GaAs process; enhancement mode heterojunction FET; enhancement mode single supply power HFET; gate length; low voltage high efficiency power amplifier applications; portable applications; power gain; power output; power-added efficiency; single voltage supply; Circuits; Gallium arsenide; HEMTs; Laboratories; MODFETs; Plasma temperature; Power supplies; Rapid thermal annealing; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596590

Filename

596590