A silicon-based electrical source for surface plasmon polaritons

Author

Walters, Robert J. ; Van Loon, Rob V A ; Brunets, Ihor ; Schmitz, Jurriaan ; Polman, Albert

Author_Institution

Center for Nanophotonics, FOM Inst. for Atomic & Mol. Phys., Amsterdam, Netherlands

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

74

Lastpage

76

Abstract

This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes that are compatible with backend CMOS technology. The fabricated device suggests a route forward towards high density, active plasmonic circuits that are integrated with silicon microelectronics.

Keywords

MIM devices; alumina; elemental semiconductors; integrated optics; integrated optoelectronics; nanostructured materials; optical waveguides; polaritons; silicon; surface plasmons; Si:Al₂O₃; active plasmonic circuits; alumina-doped silicon nanocrystal; backend CMOS technology; high density circuits; integrated silicon microelectronics; low temperature fabrication; metal-insulator-metal waveguide geometry; microtechnology processes; silicon-based electrical source; surface plasmon polaritons; CMOS process; CMOS technology; Geometry; Metal-insulator structures; Nanocrystals; Optical device fabrication; Plasmons; Silicon; Surface waves; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Conference_Location

San Francisco, CA

ISSN

1949-2081

Print_ISBN

978-1-4244-4402-1

Electronic_ISBN

1949-2081

Type

conf

DOI

10.1109/GROUP4.2009.5338358

Filename

5338358