Title :
Efficient luminescence in highly tensile-strained germanium
Author :
Huo, Y. ; Lin, H. ; Rong, Y. ; Makarova, M. ; Li, M. ; Chen, R. ; Kamins, T.I. ; Vuckovic, J. ; Harris, J.S.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Up to 2.3% biaxial tensile-strained Ge layers have been grown on InGaAs/GaAs buffer layers. A dramatic increase in low temperature photoluminescence intensity for >2% strained Ge confirms the existence of a direct band gap Ge.
Keywords :
III-V semiconductors; elemental semiconductors; energy gap; gallium arsenide; germanium; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; Ge; III-V MBE system; InGaAs-GaAs; biaxial tensile-strained Ge layers; buffer layers; direct band gap; efficient luminescence; highly tensile-strained germanium; low temperature photoluminescence intensity; Buffer layers; Electrons; Gallium arsenide; Germanium; Indium gallium arsenide; Lattices; Luminescence; Photonic band gap; Strain measurement; Tensile strain;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338361
