DocumentCode
2472752
Title
Efficient luminescence in highly tensile-strained germanium
Author
Huo, Y. ; Lin, H. ; Rong, Y. ; Makarova, M. ; Li, M. ; Chen, R. ; Kamins, T.I. ; Vuckovic, J. ; Harris, J.S.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
265
Lastpage
267
Abstract
Up to 2.3% biaxial tensile-strained Ge layers have been grown on InGaAs/GaAs buffer layers. A dramatic increase in low temperature photoluminescence intensity for >2% strained Ge confirms the existence of a direct band gap Ge.
Keywords
III-V semiconductors; elemental semiconductors; energy gap; gallium arsenide; germanium; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; Ge; III-V MBE system; InGaAs-GaAs; biaxial tensile-strained Ge layers; buffer layers; direct band gap; efficient luminescence; highly tensile-strained germanium; low temperature photoluminescence intensity; Buffer layers; Electrons; Gallium arsenide; Germanium; Indium gallium arsenide; Lattices; Luminescence; Photonic band gap; Strain measurement; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location
San Francisco, CA
ISSN
1949-2081
Print_ISBN
978-1-4244-4402-1
Electronic_ISBN
1949-2081
Type
conf
DOI
10.1109/GROUP4.2009.5338361
Filename
5338361
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