DocumentCode
2472808
Title
Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser
Author
El Kurdi, M. ; Ngo, T.-P. ; Checoury, X. ; Sauvage, S. ; Fishman, G. ; Kociniewski, T. ; Débarre, D. ; Boulmer, J. ; Boucaud, P. ; Damlencourt, J.F. ; Kermarrec, O. ; Bensahel, D. ; Jakomin, R. ; Sagnes, I.
Author_Institution
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud 11, Orsay, France
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
259
Lastpage
261
Abstract
Using a 30 band k.p formalism, we calculate the band structure and the optical gain of tensilely-strained germanium. We show that the room temperature emission of germanium-on-insulator can be significantly enhanced by n-doping of germanium.
Keywords
band structure; elemental semiconductors; germanium; photoluminescence; semiconductor doping; semiconductor lasers; Ge; Ge laser; band structure; germanium-on-insulator; n-type doping; optical gain; room temperature emission; temperature 293 K to 298 K; tensile-strain doping; tensilely-strained germanium; thirty band k.p formalism; Capacitive sensors; Doping; Germanium; Optical materials; Optical pumping; Optical waveguides; Photonic band gap; Stimulated emission; Temperature; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location
San Francisco, CA
ISSN
1949-2081
Print_ISBN
978-1-4244-4402-1
Electronic_ISBN
1949-2081
Type
conf
DOI
10.1109/GROUP4.2009.5338363
Filename
5338363
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