Title :
Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser
Author :
El Kurdi, M. ; Ngo, T.-P. ; Checoury, X. ; Sauvage, S. ; Fishman, G. ; Kociniewski, T. ; Débarre, D. ; Boulmer, J. ; Boucaud, P. ; Damlencourt, J.F. ; Kermarrec, O. ; Bensahel, D. ; Jakomin, R. ; Sagnes, I.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud 11, Orsay, France
Abstract :
Using a 30 band k.p formalism, we calculate the band structure and the optical gain of tensilely-strained germanium. We show that the room temperature emission of germanium-on-insulator can be significantly enhanced by n-doping of germanium.
Keywords :
band structure; elemental semiconductors; germanium; photoluminescence; semiconductor doping; semiconductor lasers; Ge; Ge laser; band structure; germanium-on-insulator; n-type doping; optical gain; room temperature emission; temperature 293 K to 298 K; tensile-strain doping; tensilely-strained germanium; thirty band k.p formalism; Capacitive sensors; Doping; Germanium; Optical materials; Optical pumping; Optical waveguides; Photonic band gap; Stimulated emission; Temperature; Tensile strain;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338363
