Title :
Optical gain from the direct gap transition of Ge-on-Si at room temperature
Author :
Liu, Jifeng ; Sun, Xiaochen ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution :
Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.
Keywords :
elemental semiconductors; energy gap; germanium; optical materials; optical saturable absorption; semiconductor doping; semiconductor epitaxial layers; Ge; Si; band-engineered Ge-on-Si; direct band gap; direct gap transition; laser gain medium; monolithic optical amplifiers; n-type doping; optical bleaching; optical gain; room temperature transition; temperature 293 K to 298 K; tensile strained n+ epitaxial Ge-on-Si; Doping; Optical buffering; Optical films; Optical pumping; Optical waveguides; Photonic band gap; Probes; Stimulated emission; Temperature; Waveguide lasers;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338364
