Title :
Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)
Author :
Sumitomo, Masakiyo ; Asai, Junichi ; Sakane, Hiroki ; Arakawa, Kazuki ; Higuchi, Yasushi ; Matsui, Masaki
Author_Institution :
Res. Labs., DENSO Corp., Nisshin, Japan
Abstract :
A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat)-Eoff trade off. Furthermore, it can be adapted to actual conditions because of its sufficiently rugged structure.
Keywords :
insulated gate bipolar transistors; semiconductor device manufacture; IGBT; injection enhancement; insulated gate bipolar transistors; partially narrow mesa structure; saturation voltage reduction; Fabrication; Insulated gate bipolar transistors; Logic gates; Oxidation; Prototypes; Silicon; Simulation; IEGT; IGBT; injection enhancement;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229012
