Title :
3.4 V operation 1 W MMIC power amplifier with SrTiO/sub 3/ capacitors for digital cellular phones
Author :
Yamaguchi, K. ; Nishimura, T.B. ; Iwata, N. ; Takemura, K. ; Kuzuhara, M. ; Miyasaka, Y.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This paper describes 950 MHz power performance of a two-stage MMIC amplifier utilizing n-AlGaAs/InGaAs/n-AlGaAs FETs and SiTiO/sub 3/ capacitors. Under 3.4 V drain bias operation, the MMIC with 2.0/spl times/2.4 mm/sup 2/ area delivered a /spl pi//4-shifted QPSK output signal of 0.8 W (29.0 dBm), a power-added efficiency (PAE) of 30% and an associated gain of 26.4 dB with an adjacent channel leakage power at 50 kHz off-center frequency of -50.5 dBc. It also achieved a saturated output power of 1.1 W with PAE of 39%.
Keywords :
JFET integrated circuits; MMIC power amplifiers; capacitors; cellular radio; digital radio; field effect MMIC; field effect analogue integrated circuits; land mobile radio; strontium compounds; telephone sets; /spl pi//4-shifted QPSK signal; 1 W; 26.4 dB; 3.4 V; 39 percent; 950 MHz; AlGaAs-InGaAs-AlGaAs; SrTiO/sub 3/; SrTiO/sub 3/ capacitor; adjacent channel leakage power; digital cellular phone; gain; n-AlGaAs/InGaAs/n-AlGaAs HJFET; output power; power-added efficiency; two-stage MMIC power amplifier; Capacitors; FETs; Frequency; Gain; Indium gallium arsenide; MMICs; Operational amplifiers; Power amplifiers; Power generation; Quadrature phase shift keying;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596591
