Title :
Characterization of a new 4.5 kV press pack SPT+ IGBT in Voltage Source Converters with clamp circuit
Author :
Alvarez, Rodrigo ; Bernet, Steffen ; Lindenmueller, Lars ; Filsecker, Felipe
Author_Institution :
Power Electron. Lab., Tech. Univ. of Dresden, Dresden, Germany
Abstract :
Recently developed IGBT press pack devices have become a competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. A new 85 mm, 4.5 kV, 1.2 kA press pack SPT+ IGBT and the corresponding freewheeling diode are characterized for an operation in Voltage Source Converters. To reduce the IGBT turn-on losses compared to hard switching the clamp circuit configuration of IGCTs was adapted to the operation of press pack IGBTs. The switching behavior of IGBT and diode are characterized for varying dc-link voltages, load currents, junction temperatures and clamp inductances.
Keywords :
clamps; insulated gate bipolar transistors; power convertors; power semiconductor diodes; IGBT press pack devices; IGBT turn-on losses; active turn-off capability; clamp circuit; clamp inductances; current 1.2 kA; dc-link voltages; freewheeling diode; junction temperatures; load currents; medium voltage power semiconductors; voltage 4.5 kV; voltage source converters; Clamps; Electronics industry; Insulated gate bipolar transistors; Medium voltage; Power electronics; Power semiconductor switches; Semiconductor diodes; Semiconductor optical amplifiers; Switching circuits; Temperature;
Conference_Titel :
Industrial Technology (ICIT), 2010 IEEE International Conference on
Conference_Location :
Vi a del Mar
Print_ISBN :
978-1-4244-5695-6
Electronic_ISBN :
978-1-4244-5696-3
DOI :
10.1109/ICIT.2010.5472715
