Title :
Approach of various polymers to 157 nm single-layer resists
Author :
Kishimura, S. ; Sasago, Masaru ; Shirai, Mikiyasu ; Tsunooka, Masahiro
Author_Institution :
ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan
Abstract :
Vacuum ultraviolet (VUV) lithography using the F/sub 2/ excimer laser (157 nm) has been proposed as the most promising candidates for 100-70 nm rule device. We have investigated the transparency and photochemical reaction of well-known polymers and resists in VUV region. In this study, we report the F/sub 2/ excimer laser exposure characteristics of resists consisting of various polymers for KrF and ArF resists.
Keywords :
photoresists; polymer films; ultraviolet lithography; 157 nm; ArF resist; F/sub 2/ excimer laser; KrF resist; photochemical reaction; polymer; single-layer resist; transparency; vacuum ultraviolet lithography; Chemical lasers; Chemical technology; Chemistry; Engines; Lithography; Photochemistry; Polymers; Resists; Solvents; Ultra large scale integration;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872644
