Title :
Single lobed far-field operation of extended cavity AlGaInP lasers
Author :
Hamilton, C.J. ; Kowalski, O.P. ; McIlvaney, K. ; Marsh, J.H. ; Button, C.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Extended cavity oxide stripe lasers (OSL) have been fabricated using a simple quantum well intermixing (QWI) method. Pulsed operation of the devices delivered 35O mW from a single facet into a Gaussian far-field pattern with a FWHM of 3.7". In CW operation the device delivered 195 mW from a single facet in a predominately Gaussian distribution
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; 195 mW; 350 mW; AlGaInP; CW operation; Gaussian distribution; Gaussian far-field pattern; extended cavity AlGaInP lasers; extended cavity oxide stripe lasers; pulsed operation; quantum well intermixing; single fac; single lobed far-field operation; Diffraction; Diode lasers; Laser excitation; Laser modes; Pump lasers; Rapid thermal annealing; Refractive index; Slabs; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739608
