Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

Author

De Jaeger, B. ; Van Hove, M. ; Wellekens, D. ; Kang, X. ; Liang, H. ; Mannaert, G. ; Geens, K. ; Decoutere, S.

Author_Institution

imec, Leuven, Belgium

fYear

2012

fDate

3-7 June 2012

Firstpage

49

Lastpage

52

Abstract

Au-free CMOS-compatible AlGaN/GaN HEMT devices have been processed on 200 mm Si substrates u sing a typical CMOS tool set. This paper addresses the challenges with respect to the AlGaN/GaN epitaxy, the processing of thick and bowed 200 mm GaN-on-Si wafers, the impact of Ga contamination on the tools, etc.. An enhancement mode AlGaN/GaN MISHEMT process based on barrier recess is used as demonstrator, and yielded fully functional power devices.

Keywords

CMOS integrated circuits; II-VI semiconductors; aluminium compounds; epitaxial growth; gallium compounds; high electron mobility transistors; power semiconductor devices; semiconductor growth; wide band gap semiconductors; AlGaN-GaN; CMOS-compatible HEMT processing; GaN-on-Si wafer; Si; enhancement mode MISHEMT process; epitaxy; size 200 mm; typical CMOS tool set; Aluminum gallium nitride; CMOS integrated circuits; Gallium nitride; HEMTs; Logic gates; Silicon; Substrates; 200 mm; AlGaN/GaN HEMT; Au-free; CMOS-compatible; GaN-on-Si; e-mode;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229020

Filename

6229020