Title :
A new embedded inductor for ZVS DC-DC converter applications
Author :
Fang, Xiangming ; Wu, Rongxiang ; Peng, Lulu ; Sin, Johnny K O
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
In this paper, a new tapered silicon-embedded coreless power inductor is proposed and demonstrated. The width and depth for the different turns of the inductor are designed with different values to reduce the proximity effect. An 18.6 nH inductance and a peak Q factor of 12.1 are achieved at 23 MHz within a chip area of 0.8 mm2. The AC power loss of the inductor is reduced by a maximum of 56% using the novel design. The inductor shows a peak efficiency of 91% in ZVS conversion applications, and is the highest in monolithic ZVS DC-DC converters reported so far.
Keywords :
DC-DC power convertors; Q-factor; AC power loss; ZVS DC-DC converter applications; embedded inductor; peak Q factor; proximity effect; silicon-embedded coreless power inductor; Inductors; Magnetic cores; Proximity effects; Resistance; Silicon; Windings; Zero voltage switching; DC-DC power conversion; monolithic inductor; power integrated circuits; proximity effect;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229021
