DocumentCode :
2473056
Title :
Precise delineation characteristics for 1/spl times/X-ray mask using advanced electron beam mask writer EB-X3
Author :
Tsuboi, Shiniji ; Watanabe, Hiroshi ; Ezaki, Mizunori ; Aoyama, Hajime ; Kikuchi, Yukiko ; Nakayama, Yoshinori ; Ohki, Shigehisa ; Watanabe, Toshihumi ; Morosawa, Tetsuo ; Saito, Kenichi ; Oda, Masatoshi ; Matsuda, Tadahito
Author_Institution :
ASET Super-fine SR Lithography Lab., Telecommun. Energy Lab., Atsugi, Japan
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
112
Lastpage :
113
Abstract :
A variable-shaped electron beam (e-beam) mask writer, EB-X3 was developed for 100 nm node 1/spl times/X-ray mask fabrication. It features a stable electron column of 100 kV and the address unit of 1 nm. This paper describes delineation characteristics of the EB-X3 on X-ray membrane mask. We have evaluated image placement (IP) accuracy and e-beam proximity effects on the X-ray membrane delineated with the EB-X3. In order to achieve highly precise IP and CD accuracy, we evaluated beam drift, temperature control, mask blanks support method, resist process, and proximity effect. Precise temperature control and a three-point support pallet are keys for excellent IP. Good CD control less than 10 nm was obtained with low proximity effects with ZEP resist and normal-hexyl acetate developer. The EB-X3 was used for X-ray mask fabrication in conjunction with an X-ray stepper in exposure experiments.
Keywords :
X-ray masks; electron beam lithography; nanotechnology; proximity effect (lithography); 100 kV; CD accuracy; X-ray mask fabrication; X-ray stepper; advanced electron beam mask writer; beam drift; electron beam proximity effects; image placement accuracy; mask blanks support method; precise delineation characteristics; proximity X-ray lithography; proximity effect; resist process; stable electron column; temperature control; three-point support pallet; variable-shaped electron beam; Biomembranes; Electron beams; Error correction; Fabrication; Laboratories; NIST; Proximity effect; Resists; Temperature control; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872648
Filename :
872648
Link To Document :
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