DocumentCode :
2473091
Title :
Stress-induced χ(2) in silicon — Comparison between theoretical and experimental values
Author :
Hon, Nick K. ; Tsia, Kevin K. ; Solli, Daniel R. ; Jalali, Bahram ; Khurgin, Jacob B.
Author_Institution :
Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
fYear :
2009
fDate :
9-11 Sept. 2009
Firstpage :
232
Lastpage :
234
Abstract :
We provide a new theoretical estimation of stress-induced chi(2) in silicon and highlight the fact that there exists a large difference between theoretical and experimentally measured values. Possible reasons for this discrepancy are discussed.
Keywords :
elemental semiconductors; integrated optics; nonlinear optical susceptibility; piezo-optical effects; silicon; Si; measurement discrepancy; silicon photonic devices; strained induced second order nonlinearity; strained silicon; stress-induced chi(2); Estimation theory; Silicon; Stress measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
ISSN :
1949-2081
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
Type :
conf
DOI :
10.1109/GROUP4.2009.5338380
Filename :
5338380
Link To Document :
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