Title :
Silicon needle crystals fabricated by high-selective anisotropic dry etching and their characteristics of field emission current
Author :
Kanechika, Masakazu ; Mitsushima, Yasuichi
Author_Institution :
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
Abstract :
We study silicon needle crystals fabricated by high-selective anisotropic dry etching. The etch mask is not the fine patterned photoresist but the oxygen precipitation, which is induced by nitride ion implantation and the following oxidization. The silicon needle crystals have less than 10 nm tip radius and high aspect ratio 7. We demonstrate the field emission diode by these silicon needle crystals.
Keywords :
diodes; electron field emission; elemental semiconductors; silicon; sputter etching; vacuum microelectronics; Si; anisotropic dry etching; aspect ratio; fabrication; field emission diode; microemitter; silicon needle crystal; Anisotropic magnetoresistance; Anodes; Crystals; Diodes; Dry etching; Electrodes; Hafnium; Needles; Resists; Silicon;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872656
