Title :
A high-speed silicon FET for efficient DC-DC power conversion
Author :
Loechelt, Gary ; Grivna, Gordy ; Golonka, Laurence ; Hoggatt, Charles ; Massie, Hal ; De Pestel, Freddy ; Martens, Nick ; Mouhoubi, Samir ; Roig, Jaume ; Colpaert, Tony ; Coppens, Peter ; Bauwens, Filip ; De Backer, Eddy
Author_Institution :
ON Semicond., Phoenix, AZ, USA
Abstract :
A novel silicon device architecture for DC-DC power conversion is reported. Efficient switching at high frequencies (1-5 MHz) is achieved by simultaneously reducing gate charge, reverse capacitance, and gate resistance while still maintaining good on-state resistance and off-state breakdown voltage. Power efficiencies in excess of 88% were realized in a synchronous buck converter running at 1.3 MHz.
Keywords :
DC-DC power convertors; elemental semiconductors; field effect transistors; silicon; DC-DC power conversion; Si; efficiency 88 percent; frequency 1 MHz to 5 MHz; gate charge reduction; gate resistance; high-speed FET; off-state breakdown voltage; on-state resistance; power efficiency; reverse capacitance; synchronous buck converter; Capacitance; Immune system; Logic gates; Power MOSFET; Substrates; Switches; buck converter; efficient power conversion; figure-of-merit; high-frequency switching; silicon power MOSFET;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229029
