A high-speed silicon FET for efficient DC-DC power conversion

Author

Loechelt, Gary ; Grivna, Gordy ; Golonka, Laurence ; Hoggatt, Charles ; Massie, Hal ; De Pestel, Freddy ; Martens, Nick ; Mouhoubi, Samir ; Roig, Jaume ; Colpaert, Tony ; Coppens, Peter ; Bauwens, Filip ; De Backer, Eddy

Author_Institution

ON Semicond., Phoenix, AZ, USA

fYear

2012

fDate

3-7 June 2012

Firstpage

85

Lastpage

88

Abstract

A novel silicon device architecture for DC-DC power conversion is reported. Efficient switching at high frequencies (1-5 MHz) is achieved by simultaneously reducing gate charge, reverse capacitance, and gate resistance while still maintaining good on-state resistance and off-state breakdown voltage. Power efficiencies in excess of 88% were realized in a synchronous buck converter running at 1.3 MHz.

Keywords

DC-DC power convertors; elemental semiconductors; field effect transistors; silicon; DC-DC power conversion; Si; efficiency 88 percent; frequency 1 MHz to 5 MHz; gate charge reduction; gate resistance; high-speed FET; off-state breakdown voltage; on-state resistance; power efficiency; reverse capacitance; synchronous buck converter; Capacitance; Immune system; Logic gates; Power MOSFET; Substrates; Switches; buck converter; efficient power conversion; figure-of-merit; high-frequency switching; silicon power MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229029

Filename

6229029