DocumentCode
2473253
Title
A family of robust DMOS devices for automotive applications
Author
Mouhoubi, S. ; Wu, Y. ; Bauwens, F. ; Roig, J. ; Gassot, P. ; Tack, M.
Author_Institution
On Semicond., Power Technol. Centre, Oudenaarde, Belgium
fYear
2012
fDate
3-7 June 2012
Firstpage
97
Lastpage
100
Abstract
This paper presents different methodologies to optimize devices of smart power technologies for robustness consideration. A split gate concept is used to improve the flatness of Id-Vd curves of the nVDMOS by maintaining the Intrinsic MOS in a stable operating regime. The split gate is also used to increase the BVdss of the pLDMOS. An additional buffer at the end of the drift region of the nLDMOS helps extending the SOA limits due to a controlled positive differential resistor branch.
Keywords
automotive electronics; power MOSFET; automotive application; controlled positive differential resistor; intrinsic MOS; nVDMOS; robust DMOS device; safe operating area; smart power technology; split gate concept; Implants; Logic gates; Resistance; Robustness; Semiconductor optical amplifiers; Transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location
Bruges
ISSN
1943-653X
Print_ISBN
978-1-4577-1594-5
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2012.6229032
Filename
6229032
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