Title :
A family of robust DMOS devices for automotive applications
Author :
Mouhoubi, S. ; Wu, Y. ; Bauwens, F. ; Roig, J. ; Gassot, P. ; Tack, M.
Author_Institution :
On Semicond., Power Technol. Centre, Oudenaarde, Belgium
Abstract :
This paper presents different methodologies to optimize devices of smart power technologies for robustness consideration. A split gate concept is used to improve the flatness of Id-Vd curves of the nVDMOS by maintaining the Intrinsic MOS in a stable operating regime. The split gate is also used to increase the BVdss of the pLDMOS. An additional buffer at the end of the drift region of the nLDMOS helps extending the SOA limits due to a controlled positive differential resistor branch.
Keywords :
automotive electronics; power MOSFET; automotive application; controlled positive differential resistor; intrinsic MOS; nVDMOS; robust DMOS device; safe operating area; smart power technology; split gate concept; Implants; Logic gates; Resistance; Robustness; Semiconductor optical amplifiers; Transistors; Voltage measurement;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229032
