Title :
High-power mid-IR interband cascade lasers
Author :
Lin, C.-H. ; Zhang, D. ; Yang, B.H. ; Zheng, J. ; Yang, R.Q. ; Pei, S.S.
Author_Institution :
Houston Univ., TX, USA
Abstract :
The type-II InAs-InGaSb-AlSb interband cascade (IC) laser diode structure has several advantages over the other approaches for the MIR lasers. The type-II IC structure uses interband transitions instead of intersubband, which eliminates the phonon relaxation path while retaining the advantages of electron recycling; therefore, the threshold current density could be much lower
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; semiconductor lasers; InAs-InGaSb-AlSb; MIR lasers; electron recycling; high-power mid-IR interband cascade lasers; interband transitions; phonon relaxation path; threshold current density; type-II IC structure; type-II InAs-InGaSb-AlSb interband cascade laser diode structure; Chemical lasers; Optical fiber communication; Photonic integrated circuits; Power generation; Power lasers; Quantum cascade lasers; Recycling; Temperature; Threshold current; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739623
