DocumentCode :
2473317
Title :
Influence of electron density distribution at the electron source in a projection exposure system
Author :
Kotera, M. ; Sakai, M. ; Shimizu, I. ; Tomo, Y. ; Yoshida, A. ; Kojima, Y. ; Yamabe, M.
Author_Institution :
Osaka Inst. of Technol., Japan
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
140
Lastpage :
141
Abstract :
The exposure characteristics are largely influenced by the size of the electron source. The characteristics are also influenced by the electron density distribution at the source. In order to discuss these effects quantitatively, individual electron trajectory is traced in a realistic projection exposure optical system in the present study. Based on the results obtained above, the most preferable conditions on the electron source are clarified for the projection exposure system.
Keywords :
electron beam lithography; electron density; electron optics; electron sources; electron beam lithography; electron density distribution; electron source; electron trajectory; projection exposure optical system; Apertures; Electron beams; Electron optics; Electron sources; Gaussian distribution; Lead compounds; Lenses; Lighting; Optical beams; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872662
Filename :
872662
Link To Document :
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