Modeling of mid-IR type-II interband cascade lasers

Author

Mu, Yao-Ming ; Yang, Rui Q.

Author_Institution

Space Vacuum Epitaxy Center, Houston Univ., TX, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

317

Abstract

Summary form only given. We report calculations of band structures, optical gain, and threshold current density in mid-IR type-II interband cascade lasers. Implications of the calculated results will be discussed in connection with device performance. Our calculations are based on Kane´s eight-band k.p model with envelope wavefunction approximation and strain effects included. The band structures for InAs-GaInSb-AlSb QW active region in a type-II interband cascade laser at 80 K and 300 K are computed with a constant electric field F

Keywords

III-V semiconductors; aluminium compounds; band structure; gallium compounds; indium compounds; infrared sources; laser theory; quantum well lasers; semiconductor device models; 300 K; 80 K; InAs-GaInSb-AlSb; InAs-GaInSb-AlSb QW active region; Kane´s eight-band k.p model; band structures; constant electric field; device performance; envelope wavefunction approximation; mid-IR type-II interband cascade laser modelling; mid-IR type-II interband cascade lasers; optical gain; strain effects; threshold current density; type-II interband cascade laser; Current density; Elementary particle vacuum; Laser transitions; Optical losses; Optical materials; Optical scattering; Particle scattering; Quantum cascade lasers; Stimulated emission; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739624

Filename

739624