Title :
A S-band push-pull 60-watt GaAs MESFET for MMDS applications
Author :
Sarkissian, G. ; Basset, R. ; Shingu, Z. ; Ono, F.
Author_Institution :
California Eastern Labs., Santa Clara, CA, USA
Abstract :
A new 2.5-2.7 GHz High-Power GaAs FET for the MMDS application is presented. It uses two pairs of pre-matched chips mounted on the same carrier and combined in push-pull configuration with a microstrip balun. This device exhibits 60 W of output power with 11.0 dB of gain. This is the highest power reported for such a device.
Keywords :
III-V semiconductors; UHF field effect transistors; baluns; cable television; gallium arsenide; power MESFET; power field effect transistors; radio equipment; 11.0 dB; 2.5 to 2.7 GHz; 60 W; GaAs; MMDS; S-band push-pull GaAs MESFET; high-power FET; microstrip balun; Circuits; FETs; Gain; Gallium arsenide; Impedance matching; Laboratories; MESFETs; Microstrip; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596593
