Title :
60W L-band power AlGaAs/GaAs heterostructure FETs
Author :
Morikawa, J. ; Asano, K. ; Ishikura, K. ; Oikawa, H. ; Kanamori, M. ; Kuzuhara, M.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Shiga, Japan
Abstract :
This paper describes DC and RF power performance of a newly-developed high-power AlGaAs/GaAs heterostructure FET (HFET) designed for L-band SSPA applications. A push-pull power amplifier, composed of two HFET chips, demonstrated state-of-the-art power performance of 60 W output-power with a power-added efficiency (PAE) of 54% at 1.5 GHz.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; aluminium compounds; cellular radio; differential amplifiers; gallium arsenide; power field effect transistors; 1.5 GHz; 54 percent; 60 W; AlGaAs-GaAs; DC power performance; HFET; L-band; RF power performance; SSPA applications; power heterostructure FETs; power-added efficiency; push-pull power amplifier; Dry etching; Gallium arsenide; HEMTs; L-band; Laboratories; MESFETs; MODFETs; National electric code; Power amplifiers; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596594
