Title :
Blue InGaN MQW laser diodes on sapphire
Author :
DenBaars, S.P. ; Abare, A.C. ; Mack, M.P. ; Hansen, M. ; Sink, R.K. ; Kozodoy, P. ; Keller, S. ; Speck, J.S. ; Bowers, J.E. ; Mishra, U.K. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report on the properties of blue InGaN MQW laser diodes fabricated using reactive ion etched facets on c-plane sapphire and cleaved facets on a-plane sapphire. We have also investigated the use of silicon doping in the quantum wells for the etched facet lasers
Keywords :
III-V semiconductors; etching; gallium compounds; indium compounds; optical fabrication; quantum well lasers; semiconductor doping; InGaN; Si; a-plane sapphire; blue InGaN MQW laser diodes; c-plane sapphire; etched facet lasers; leaved facets; quantum wells; reactive ion etched facets; sapphire; silicon doping; Diode lasers; Etching; Laser theory; Optical pulses; Physics; Quantum well devices; Semiconductor diodes; Semiconductor lasers; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739704
