Lifetime and spin relaxation time measurements of micro-fabricated GaAs tips

Author

Shinohara, R. ; Yamaguchi, K. ; Hirota, H. ; Suzuki, Y. ; Manago, T. ; Akinaga, H. ; Kuroda, T. ; Minami, F.

Author_Institution

Dept. of Electron. Eng., Univ. of Electro-Commun., Tokyo, Japan

fYear

2000

fDate

11-13 July 2000

Firstpage

170

Lastpage

171

Abstract

Circularly polarized light pumped GaAs tip is expected for application to a spin-polarized electron source, and, development of spin-polarized scanning tunneling microscope (SP-STM) using the GaAs tip has recently been attempted by some research groups. So far spin dependent tunneling current has been detected for the magnetic sample in SP-STM using the GaAs tip. However, there was very little information concerning to lifetime and spin relaxation time of electrons in the GaAs tips. In this study, time-resolved photoluminescence (TR-PL) from GaAs microtips was measured to evaluate lifetime and spin relaxation time.

Keywords

III-V semiconductors; electron sources; electron spin polarisation; gallium arsenide; micromachining; photoluminescence; time resolved spectra; GaAs; lifetime; micro-fabricated GaAs tips; spin relaxation time; time-resolved photoluminescence; Atomic measurements; Gallium arsenide; Gold; Luminescence; Optical polarization; Optical surface waves; Photoluminescence; Scanning electron microscopy; Substrates; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872686

Filename

872686