α-sexithiophene based organic thin film transistors as gas sensor

Author

Fu, Song-Qi ; Xie, Guang-Zhong ; Tai, Hui-Ling ; Li, Xian ; Sun, Ping

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

fYear

2010

fDate

17-19 Dec. 2010

Firstpage

105

Lastpage

108

Abstract

A bottom contact organic thin-film transistor (OTFT) using a-sexithiophene (α-6T) as an active layer was fabricated in this paper. α-6T was deposited via vacuum evaporation onto a SiO₂/n-Si substrate and was characterized by scanning electron microscope (SEM). The current-voltage characteristics of the α-6T OTFT and its response to different concentrations of methanol, alcohol and secondary butyl alcohol vapor were investigated. It was found that the drain-source current in the saturation region decreases rapidly when the OTFT was exposed to methanol, alcohol and secondary butyl alcohol vapor. The results showed that such α-6T OTFT sensors are promising to act as a novel class of chemical sensors.

Keywords

gas sensors; organic semiconductors; scanning electron microscopy; thin film transistors; α-sexithiophene; SEM; Si; SiO₂-Si; bottom contact organic thin-fllm transistor; chemical sensors; current-voltage characteristics; drain-source current; evaporation; gas sensor; scanning electron microscopy; secondary butyl alcohol vapor; Gas detectors; Logic gates; Methanol; Organic thin film transistors; Scanning electron microscopy; a-sexithiophene; alcohol; gas sensor; methanol; organic thin-film transistor; secondary butyl alcohol;

fLanguage

English

Publisher

ieee

Conference_Titel

Apperceiving Computing and Intelligence Analysis (ICACIA), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-8025-8

Type

conf

DOI

10.1109/ICACIA.2010.5709861

Filename

5709861