Enhanced short-circuit performance of 3.3kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in NPT technology with RTA Anode.

In this paper, we report the experimental results of a 3.3kV rated CIGBT (Clustered Insulated Gate Bipolar Transistor) with planar gates in non-punch through technology (NPT) with RTA anode. Previously it was reported that for identical turn-off losses the on-state voltage of the 3.3kV NPT-CIGBT is less than 0.7V as compared to that of a commercially available FS-IGBT. Herein we show that due to the low saturation current density, the CIGBT has a rugged short circuit performance, as measured to be of more than 100μs at 25°C which is much higher than any MOS controlled bipolar device ever reported. Furthermore, results also show that the use of the RTA anode compared to the diffused anode helps in reducing the turn-off losses by about 50% without affecting the Vce(sat) of the device.