Al dot hexagonal array formation using anodic oxidation and selective etching

Fabrication of nanoscale dot array are intensively required for realizing ultimately dense memory devices as well as quantum devices based on single-electron phenomena. However, there is an inherent problem for patterning time when pattern size shrinks below a few tens of nm, by lithographic methods based on beam technology. Patterning methods using self-organization phenomena provide alternative approach for realization of ordered array of nanostructure in relatively short time with a significant cost reduction. Al anodic oxidation has a high capability for realizing an extremely highly ordered array of nano-hole, so that there have been several attempts to realize nanowire arrays. The present study investigates formation of nano-dot array on semiconductor substrate using Al anodic oxidation.